"Preparation of SnO2 thin films by doping with F-1 ions using chemical spray pyrolysis"
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Abstract
In this paper, the structural and optical properties of pure Tin Oxide and doped by Fluorine (F). Thin films were studied prepared by chemical spray pyrolysis on glass substrates at temperature 400oC. The nature of crystallization of the compounds was examined by using X-Ray diffraction technique which showed that the prepared thin films are polycrystalline structure, and the doping processes didn,t show any obvious differences on the crystalline structure of (SnO2). The DC conductivity measurements of the samples were performed by means of a two probe method. The activation energies were computed from the plots of σdc versus 1000/T. To obtain the optical parameters, the absorption and transmittance spectra were recorded in the wave length range 300-1100 nm, the energy gap of the direct and indirect allowed transition were calculated. The optical parameters such as absorption coefficient (α), refractive index (n), extinction coefficient (Ko), dielectric constant (ε'), and dielectric loss (tanδ), were also investigated.
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References
[1] R. Kumar, C. Zhou, ACS Nano, 4 (2010) 11
[2] M. Adnane, H. Cachet, G. Folcher, S. Hamzaoui, Thin Solid Films, 492 (2005) 240.
[3] C. Sima, C. Grigoriu, S. Antohe, Thin Solid Films, 519 (2010) 595.
[4] A. Purwanto, H. Widiyandari, D. Hidayat, F. Iskandar, K. Okuyama, Chem. Mater., 21 (2009) 4087.
[5]M. Oshima and K. Yoshino, J. Electron. Mater., 39 (2010) 816.
[6] Q Zhao, S Wu and D Miao, Adv. Mater. Res., 1043 (2011) 150–151.
[7] P. Rajaram , Y. Goswami, , S. Rajagopalan, V. Gupta, Materials Letters, 54 (2002) 158.
[8] P S Shewale, S I Patil and M D Uplane, Semicond. Sci. Technol., 25 (2010) 115008 .
[9] Shadia J. Ikhmayies, International Journal of Materials and Chemistry, 2 (2012) 173-177
[10] K. L. Chopra, S. Major and D. K. Pandya, Thin Solid films, 102 (1983) 1-46.
[11] W. Siefert, Thin Solid Films, 121 (1984) 275-282.
[12] R.N. Bhattacharya, D. Banerjee, R. Padmanabhary, Y. T. Wang, J. Chen, Z. E. Ren, A. M. Hermann ,R.D. Blaugher, Supercond. Sci. Technol., 5 (2002) 1288.
[13] E. Elengovan, K.Ramamurthi, Journal of Optoelectronics and Advanced Materials, 5 (2003) 45–54.
[14]. A.A. Yadava, E.U. Masumdara, A.V. Moholkar, M. Neumann-Spallartc, K.Y. Rajpured and C.H. Bhosaled, Journal of Alloys and Compounds, 448 (2009) 350–355.
[15] N.F.Habubi , K. A. Mishjal, Z. T. Kasiar, J. of Education College, 2 (2002) 81.
[16] X. Li, T. Gessert, C. Dehart, T. Barnes, H. Moutinho, Y. Yan, D. Young, M. Young , J. Perkins , and T. Coutts, Lakewood, Colorado, 520(2001) 3101.
[17], L. M. Caicedo, L. C. Moreno, J. W. Sandino, G. Gordillo, Surface Review and Letters , 9 (2002) 1693.
[18] S.A. Alnaimi and M.N. AL-Dileamy "Determination of the Optical Constants of Cadmium Stannate ( Cd2SnO4) films " 3 (2007) 30-39.
[19] Jun Zhang et al, J. Phys. Condense. Matter, 19 (2007) 256.
[20] Kodigala Subba Ramaiah , V. Sundara Raja, Applied Surface Science 253 (2006) 1451–1458
[21] Demet Tatar and Bahattin Duzgun, Pramana-journal of Phys., 79 (2012) 137-150.
[22] M.M. Bagheri-Mohageri and M. Shokooh-Saremi, Semicond.Sci. Tecnol., 19 (2004) 764.
[23] X. C. Yang, Mater. Sci. Eng. B 93, (2002) 249.
[24] A A Yadav, E U Masumdar, A V Moholkar, M Neumann-Spallart, K Y Rajpure and C H Bhosale, J. Alloys and Compounds, 448 (2009) 350.
[25] N. H. Vasoya, V. K. Lakhani, P. U. Sharma, K. B. Modi, Ravi Kumar and H. H. Joshi J. Phys. : Condens. Matter, 18 (2006) 8063
[26] M. M. Bagheri-Mohagheri and M. Shokooh-Saremi, Semicond. Sci. Tecnol., 19 (2004) 764.
[27]A.K. Abass, A.K. Hassen and R.H. Misho, Jappl. Phys, 58 (1985) 1640.
[28] Bushra. K.H.al-Maiyaly, I.H. Khudayer, Ayser .J.Ibraheim, International Journal of Innovative Research in Science Engineering and Technology, 3 (2014) 8694 – 8700.
[29] R. Ferro, J. A. Rodrigucz, Phys. Stat. Sol. (B), 220 (2000) 299.
[30] N. F. Habubi, K.A. Mishjal, A.H. Dagir, J. of College of Education, .1 (1993) 5 .
[31] B. Thangaraju, P. Kaliannan, Crys Res, Techonal, 35 (2012) 71-75 .
[32] M. M. Abdul El- Raheem and Ateyyah M. Al – Baradi, International Journal of Physical Sciences:; 8 (2013) 1570 – 1580.
[33] S.K. Al-Ani and C.A. Hogarth, J. Materials science 20 (1985) 2526-2532.
[34] P.Nagles, “Electronic transport in Amorphous semiconductors”, (1979).
[35] Khalid Haneen AbassInternational Letters of Chemistry, Physics and Astronomy, 6 (2015) 24 – 31.
[36] Xu Z-J, Zhang F, Zhang R-J, Yu X, Zhang D-X, Wang Z-Y, et al.. Appl Phys A. 113 (2013) 557–62.
[37] Xu J-P, Zhang R-J, Chen Z-H, Wang Z-Y, Zhang F, Yu X,. Nanoscale Res Lett. 9 (2014) 1–6.