Simulating the Effect of Temperature Change on the Properties of a Quantum Dot Solar Cell
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Abstract
To develop solar cell technology, it is essential to focus on improving its efficiency at the temperatures typically encountered during operation. This study used third-generation quantum-dot solar cells (ITO/NiO/GaAs/CdTe/ZnO/Al). These cells exhibit electrical and optical properties suitable for photovoltaic applications. The impact of temperature on the performance of quantum dot solar cells is simulated using Silvaco Atlas, a tool for simulating experimental solar cells. The temperature in this work ranged from (300 K) to (350 K). The results confirmed a decrease in the solar cell's overall photovoltaic performance with increasing temperature. The electricity conversion performance decreased from (11 %) to (9.36 %), and the fill component reduced from (81.06 %) to (78.14 %). The open-circuit voltage also decreased from 0.98 V to 0.87 V. The short-circuit current density decreases slightly from (13.839 mA/cm2) to (13.7642 mA/cm2) with increasing temperature. The maximum energy of the solar cell also decreased from (2.2×10-11W) to (1.87×10-11 W) with growing temperature. This study revealed that the optimal temperature for the solar cell is 300 K, i.e., room temperature.
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