Study the compatibility between four detectors manufactured on one silicon chip
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Abstract
The tin oxide was deposited by using a vacuum thermal method on one silicon base to form four detectors , each of 0.25 cm2 in size and separated by 0.15mm. Differences in the properties of manufactured optical detectors were studied in the same method, conditions, and at the same time . The results indicated that the thickness of the films (200nm, 200nm, 170nm, 180nm). And the results haven't changed much when trying to grow another membrane. The results of the electrical properties showed a convergence in the voltage barriers (0.74, 0.75, 0.76, 0.77)V for thickness (200nm, 200nm, 170nm, 180nm) respectively, but the ideal factor between a large difference in one of the detectors (5.9, 6.1, 6, 3.5). The lighting current increases with the incident of the optical power. The results showed that the rise time of the thinnest thickness reached (0.096µs), which is the fastest among the detectors. While the thickest film has off time (8.2µs), it is the fastest time for relaxation among other detectors.
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