Doping effect by SiO2 on optical properties of ZnO Thin Films Prepared by pulsed laser depositions (PLD) technique
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In this paper,Zinc oxide was dopped by various concentrations (5,10,15,20,25) % wt, silicon oxide The mixture was deposited on glass substrate by laser pulse deposition at room temperature to obtain (Zn2SiO4) thin films .The optical properties of thin films prepared on spectral absorption and transmission recording were studied at the wavelength range (200- 1100) nm. Some of the optical constants, including absorptance, transmission, absorption coefficient, and energy gap are calculated before and after annealing at (400 ̊C) for (1 hr). Absorptance values and absorption coefficient increase after doping and transmission and energy gap decreases after the doping. Absorbance values and absorption coefficient decreases after annealing and transmission and energy gap increase after the annealing .
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