Study of the electrical properties of the thin film (SnO2 )1-X(Bi2O3)X Preparation by Vacuum evaporation system
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Abstract
In this study, bismuth element was added to the weight ratio of (0,1,3,5)% to tin element using powdered technology method. The thin film of (SnO2)1-X(Bi2O3)X have been prepared with a vacuum evaporation system and oxidized him in oven with temperature at 350° C for 30 min. Results (I-V) Characters with temperature showed that the thin film had a negative thermal resistance factor, while the results showed that the resistance value of the thin film increased from 1KΩ at (0%) to 7.5 KΩ at (5%). The thin film 's sensitivity to heat has also improved significantly. The energy activation decreased from 0,08eV at the addition (0%) to 0,03 eV at the addition of (3%)while increased to 0.087 eV at the addition of (5%) .
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