Photoluminescence lifetime in porous silicon
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Abstract
Lifetime of photoluminescence emitted by porous silicon has been investigated by using pulsed nitrogen laser as excitation source. This research also involved sample preparation. This in itself necessitated software and hardware development to enable interfacing and data logging using PC.
Orange and orange/red photoluminescence emitted from porous silicon samples have been studied at temperatures (77 - 295) K. The photoluminescence decay was intrinsically nonexponential at different temperatures. The photoluminescence lifetime, defined as 1/e times the initial intensity, decreased as emission energy increased, and increased with decreasing temperature. The time evolution of photoluminescence lifetimes and for orange porous silicon sample has been investigated.
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References
1. Gardelis, S., Rimmer, J. S., Dawson, P., Hamilton, B., Kubiak, R. A., Whall, T. E. and Parker, E. H. C. . “Evidence for quantum confinement in the photoluminescence of porous Si and SiGe”, Appl. Phys. Lett. Vol. 59, No.17 (1991) pp. 2118-2120.
2. Fuchs, H. D., Brandt, M. S., Stutzmann, M. and Weber, J. “Optical Characterization of the Visible Photoluminescence from Porous Silicon” (1992) in Light emission from Silicon, S. S. Iyer, L. T. Canham and R. T. Collins (eds) MRS Proceeding No. 256 (Material Research Society, Pittsburgh), (1992) p. 159. 3. Calcott, P. D. J., Nash, K. J., Canham, L. T., Kane, M. J. and Brumhead, D., Spectroscopic identification of the luminescence mechanism of highly porous silicon, J. Lumin. Vol. 57 (1993) pp. 257-269.
4. Sawada, S., Hamada, N. and Ookubo, N., “Mechanisms of visible photoluminescence in porous silicon”, Phys. Rev. B. Vol. 49, No. 8 (1994) pp. 5236-5245.
5. Kanemitsu, Y., “Light-emitting silicon materials”, J. Lumin, Vol. 70 (1996) pp. 333-342.
6. Gongalsky, M. B., Kharin, A. Yu., Zagorodskikh, S. A., Osminkina, L. A. and Timoshenko, V. Yu. “Photosensitized generation of singlet oxygen in porous silicon studied by simultaneous measurements of luminescence of nanocrystals and oxygen molecules”, J. Appl. Phys. 110 (2011) pp. 13707-13711.
7. Derbali, L. and Ezzaouia, H., Electrical properties improvement of multicrystalline silicon solar cells using a combination of porous silicon and vanafium oxide treatment, Applied Surface Science, Vol. 271 (2013) pp. 234-239.
8. Vial, J. C., Bsiesy, A., Gaspard, F., Herino, R., Ligeon, M., Muller, F., Romestain, R. and Macfarlane, R. M., “Mechanisms of visible-light emission from electro-oxidized porous silicon”, Phys. Rev. B 45, No. 24 (1992) pp. 14171-14176.
9. Létant, S. and Vail, J. C. “A luminescence versus temperature study of fresh and oxidized porous silicon layers under different atmospheres”, J. Appl. Phys. Vol. 84, No. 2 (1998) pp. 1041-1046.
10. Canham, L. T., “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of Wafers”, Appl. Phys. Lett. Vol. 57, No. 7 (1990) pp. 1046-1048.
11. Al-Ajili, A., Continuous-wave photoluminescence and nanostructural properties of porous silicon, International Journal of Nanoscience, Vol. 8, No. 3 (2009) pp. 311-318.
12. Xie, Y. H., Wilson, W. L., Ross, F. M., Mucha, J. A., Fitzgerald, E. A., Macaulay, J. and Harris, T. D., “Luminescence and structural study of porous silicon films”, J. Appl. Phys.Vol, 71, No. 5 (1992) pp. 2403-2407.
13. Takazawa, A., Tamura, T. and Yamada, M., “Photoluminescence mechanisms of porous Si
oxidized by dry oxygen” J. Appl. Phys. Vol.75, No. 75 (1994) pp. 2489-2495.
14. Ma, Y-R., Li, Q-S., Zhang, J-Q. and Fang, R-C. (1992) in The Study of Application of Luminescence, R-C. Fang and S-D. Xia (eds), (Press of University of Science and Technology of China) p. 59.
15. Kanemitsu, Y., “Slow decay dynamics of visible luminescence in porous silicon: Hopping of carriers confined on a shell region in nanometer-size Si crystallites” Phys. Rev. B, Vol. 48, No. 16 (1993) pp. 12357-12360.
16. Suemoto, T., Tanaka, K., Nakajima, A. and Itakura, T., c-Si like phonon structures in the luminescence of porous Si, J. Lumin. 60 & 61 (1994) pp. 324-326.
17. Ookubo, N. and Sawada, S., “Temperature dependence of photoluminescence in porous silicon and its interpretation using the porous-cluster model”, Phys. Rev. B, Vol. 51, No. 24 (1995) pp. 17526-17534.
18. Fauchet, P. M. (1995) in Porous silicon, Z. C. Feng and R. Tsu, (eds), (world Scientific) p. 449.
19. Zhang, C., Li, C., Liu, Z., Zheng, J., Xue, C., Zuo, Y., Cheng, B. and Wang, Q. “Enhanced photoluminescence from porous silicon nanowire arrays”, Nanoscale Research Letters, Vol. 8, No. 277, (2013) pp. 1-4.
20. Delerue, C., Lannoo, M. and Allan, G., Theory of the luminescence of porous silicon, J. Lumin. 57 (1993) pp. 249-256.
21. Astrova, E. V., Belov, S. V., Lebedev, A. A., Remenjuk, A. D. and Rud, Yu. V., Optical and electrical properties of porous silicon and stain-etched films, Thin Solid Films 255 (1995) pp. 196-199.
22. Motohiro, T., Takeda, Y., Hyodo, S-A., Hioki. T. and Noda, S. (1995) in Porous Silicon, Z. C. Feng and R. Tsu (eds), (World Scientific) p. 99.
23. Tischler, M. A., Collins, R. T., Stathis, J. H. and Tsang, I. C., Luminescence degradation in porous silicon, Appl. Phys. Lett. Vol. 60, No. 3 (1992) pp. 639-641.
24. Mao, J. C., Jia, Y. Q., Fu, J. S., Wu, E., Zhang, L. Z., Zhang, B. R. and Qin, G. G., Electron paramagnetic resonance observation of trigonally symmetric Si dangling bonds in porous silicon layers: Evidence of crystalline Si phase, Appl. Phys. Lett. Vol. 62, No. 12 (1993) pp. 1408-1410.
25. Qin, G. G., Huang, Y. M., Lin, J., Zhang, L. Z., Zong, B. Q. and Zhang, B. R., “Electroluminescence from Au/native oxide/p-Si and its correlation to that from Au/porous Si”, Solid State Commun. Vol. 94, No. 8 (1995) pp. 607-612.
26. Bustarret, E., Mihalcescu, I., Ligeon, M., Romestain, R., Vial, J. C. and Madéore, F., Comparsion of room temperature photoluminescence decays in anodically oxidized crystalline and X-ray-amorphous porous silicon, J. Lumin. 57 (1993) pp. 105-109.
27. Kanemitsu, Y., “Origin of the blue and red
photoluminescence from oxidized porous silicon”,
Phys. Rev. B,Vol. 49, No. 20 (1994) pp. 14732-
14735.
28. Tsuboi, T., Laiho, R. and Pavlov, A.,
“Temperature dependence of radiative and nonradiative
transition in porous silicon” Thin Solid
Films 255 (1995) pp. 216-218.
29. Zianni, X. and Nassiopoulou, A. G.,
“Photoluminescence lifetimes of Si quantum dots”, J.
Appl. Phys. 100 (2006) pp. 74312-74317.
30. Aoki, T., Kaneko, T., Sakamoto T. and
Kobayashi, S., “Photoluminescence of oxygenpassivated
porous silicon analyzed by wideband
quadrature frequency resolved spectroscopy”, Journal
of Materials Science: Materials in Electronics,
October 2007, Volume 18, Issue 1 Supplement, p.
205.
31. Amato, G., Di Francia, G., Menna, P. and Ninno,
D., “Evidence of Nanostructure of Different size in
Porous Silicon”, (1994) Europhys. Lett. Vol. 25, No.
6 (1994) pp. 471-475.