Determine the Lower-State Energy of (GaMn)As/GaAs Quantum Well using Localization Landscape Method

Main Article Content

Mubarak H. Oglah
Sabri J. Mohammed
Moustafa S. El-Daher

Abstract

The current research presented the value of the lowest state energy for (GaMn)As/GaAs Quantum Well by using the Schrodinger equation and the localization landscape method, and a comparison between the quantum confinement potential and the wavefunction localization of both the landscape method and the Schrödinger method, a great match was found between the two methods, where the Landscape method 0.1% greater than Schrodinger method. From the Hamiltonian function analysis, it was found that the quantum eigenvalues in the discrete wells interact only when the corresponding eigenvalues are close to each other. Localization appears clearly in the sub-regions of quantum well, so, we prove damping in quantum wells, especially near the boundaries of the well. The effective quantum potential W was determined.

Article Details

How to Cite
Mubarak H. Oglah, Sabri J. Mohammed, & Moustafa S. El-Daher. (2020). Determine the Lower-State Energy of (GaMn)As/GaAs Quantum Well using Localization Landscape Method. Tikrit Journal of Pure Science, 25(6), 96–102. https://doi.org/10.25130/tjps.v25i6.318
Section
Articles

References

[1] Schulz, S. and Caro, M. A. (2015). Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells. Phys. Rev. Lett. B 91: 035-439.

[2] Li, C. K., et al. (2017). Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes. Phys. Rev. Lett. B 95: 144-206.

[3] Filoche, M. and Mayboroda, S. (2012). Universal mechanism for Anderson and weak localization. PNAS 109: 14761. DOI10.1073 / 1120432109.

[4] Thouless, D.J. (1974). Electrons in Disordered Systems and the Theory of Localization. Physics Reports (Section C of Physics Letters) 13, no.3.

[5] Filoche, M., et al. (2017). Localization landscape theory of disorder in semiconductors. I. Theory and modeling. Phys. Rev. Lett. B 95: 144-204.

[6] Arnold, D. N., et al. (2016). Effective Confining Potential of Quantum States in Disordered Media. Phys. Rev. Lett. 116: 056-602.

[7] Cord, A. M._and Dominique, D. (2016). Disorder and interference: localization phenomena. V3 of arXiv:1005.0915.

[8] Marquard, O. T. et al. (2008). Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells. Phys. Rev. Lett. B 78:235-302.

[9] Lefebvre, G., et al. (2016). One single static measurement predicts wave localization in complex structures. Phys. Rev. Lett.117(7).

[10] Izrailev, F.M., Krokhin, A.A. and Makarov N.M. (2012). Anomalous localization in low-dimensional systems with correlated disorder. Physics Reports. 512: 125–254.

[11] Piccardo, M., et al. (2017). Localization landscape theory of disorder in semiconductors II. Urbach tails of disordered quantum well layers. Phys. Rev. Lett. B 95: 144-205.

[12] Watson, P. D., Godfrey, M. J., and Dawson P. (2011). Carrier localization mechanisms in InxGa1−xN/GaN quantum wells. Phys. Rev. Lett. B 83: 115-321.

[13] Binder, I., Goldstein, M. and Voda, M. (2013). On Fluctuations and Localization Length for the Anderson Model on a Strip. Journal of Spectral Theory, arXiv: 1310.0514v1.

[14] Fogiel, M. (1991). The Advanced Calculus Problem Solver A Complete Solution Guide to Any Textbook. Research and Education Association, New Jersey. XI: p.1042.