Study the electrical properties of ZnO/p-Si heterojunction prepared by chemical spray pyrolysis
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Abstract
In this work prepared ZnO/p-Si heterojunction by using spray pyrolysis method (CSP) from Zinc acetate solution (Zn(CH3COO)22H2O) on (111) oriented p-type silicon substrate with dimension (1cmx1cm) composed with (0.2M) at (350 Co), and studying The electrical properties of ZnO/p-Si heterojunction. (I-V) characteristic in dark and illumination, (C-V) characteristic and The built- in potential (Vbi) is calculated, while from I-V measurements, the ideality factor (β), the Rectification Factor(F) and (Iphoto/Idark) ratio are calculated.
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